Part Number
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MTW8N60E |
Manufacturer
|
ON Semiconductor |
Description
|
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
Published
|
Apr 26, 2005 |
Detailed Description
|
MTW8N60E
Preferred Device
Power MOSFET 8 Amps, 600 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced ter...
|
Datasheet
|
MTW8N60E
|
Overview
MTW8N60E
Preferred Device
Power MOSFET 8 Amps, 600 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additio...
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