Part Number
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M58MR016D |
Manufacturer
|
ST Microelectronics |
Description
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16 Mbit 1Mb x16 / Mux I/O / Dual Bank / Burst 1.8V Supply Flash Memory |
Published
|
Apr 26, 2005 |
Detailed Description
|
M58MR016C M58MR016D
16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory
PRELIMINARY DATA
s
SUPPLY VOL...
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Datasheet
|
M58MR016D
|
Overview
M58MR016C M58MR016D
16 Mbit (1Mb x16, Mux I/O, Dual Bank, Burst) 1.
8V Supply Flash Memory
PRELIMINARY DATA
s
SUPPLY VOLTAGE – VDD = VDDQ = 1.
7V to 2.
0V for Program, Erase and Read
s s
– VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 40MHz – Page mode Read (4 Words Page) – Random Access: 100ns
FBGA
TFBGA48 (ZC) 10 x 4 ball array
s
PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option
s
MEMORY BLOCKS – Dual Bank Memory Array: 4/12 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
Logic Diagram
VDD VDDQ VPP 4 A16-A19 ADQ0-ADQ15 W E G RP WP L K M58MR016C M58MR016D BINV WAIT 16
s
DUAL O...
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