M58MR032C M58MR032D 32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.
8V Supply Flash Memory PRELIMINARY DATA s SUPPLY VOLTAGE – VDD = VDDQ = 1.
7V to 2.
0V for Program, Erase and Read s s – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA SYNCHRONOUS / ASYNCHRONOUS READ – Burst mode Read: 40MHz – Page mode Read (4 Words Page) – Random Access: 100ns FBGA TFBGA48 (ZC) 10 x 4 ball array s PROGRAMMING TIME – 10µs by Word typical – Two or four words programming option s MEMORY BLOCKS – Dual Bank Memory Array: 8/24 Mbit – Parameter Blocks (Top or Bottom location) Figure 1.
Logic Diagram s DUAL OPERATIONS – Read within one Bank while Program or Erase within the other – No delay...

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