I
.
--em _--
an AMP company
Linear Power
Transistor, 40W 850 - 1450 MHz
Features
l l l l l l l l
NPN Silicon Microwave Power
Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute‘tiaximum
I Parameter 1 Collector-BaseVoltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation junction Temperature Storage Temperature Thermal Resistance (
Ratinas at 25°C
/ Symbol ( V,,, VEs VEBO ‘c PTO: TJ T ST0 8JC 1 Rating 56 56 3.
0 5.
6 175 200 -55 to +200 1.
0 1 Units I v V v A...