= an AMP
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company
Wireless Bipolar Power
Transistor, 850 - 960 MHz
Features
Designed for Linear Amplifier Applications Class AB: -3OdBc Typ 3rd IMD at 15 Watts PEP Class A: +53dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting
35W
PH081 o-35
.
100*.
010 (2.
54t.
25) I t .
230 c5.
?4)
Absolute‘ Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
UNLESS
OTHERWISE
NOTED, TOLERANCES
ARE
INCHES f.
005 ,.
HILuNETERS tlsnn,
Typical Optimum Device Impedances
F(MHz) 600 650 900 q#4 1 .
O + j3.
7 1.
9 1.
3 + j4.
3 j4.
0 ZOAim 2.
1 + j0.
9 1.
6+jO.
4 1.
6 + j0.
7 i.
i”Tw
- 2LOA
960
3.
0 + j2.
7
1.
7 + jO.
1
ZIN
Specificati...