*
s z E f FEYi = ----= -=-= == ,’ E an AMP company
Wireless Bipolar Power
Transistor, 1.
78 - 1.
90 GHz
Features
NPN Silicon Microwave Power
Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP Class A: +48 dBm Typ 3rd Order lnrercept Point .
Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting Gold Metallization System
15W
.
PH1819-15N
v2.
00
Power Gain I Collector Efficiency Input Return Loss Load Mismatch Tolerance 3rd Order IMD
GP I
%
7.
0 25
10 -
-
dB
I’,,=26 V,,=26 V,,=26 V,,=26 V,,=26
V, I,,=25 V.
I,,=25 V, I,,=25 V, I,,=25
mA, P,,,$5
W PEP, F=1880 MHz.
AF=lOO kHz
1O:l
%
dB dBc
mA, P,,.
,=1...