3
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an AMP comDanv
CW Power
Transistor, 2.
3 GHz
Features
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1W
PH2323-1
v2.
00
NPN Silicon Microwave Power
Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package
.
lOCZ31C :2.
s4.
25, !t
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Absolute Maximum Ratings at 25°C
1
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1
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NOTED, TDLERANCES
ARE :HILLI,,ETERS
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Electrical Characteristics
at 25°C
Test Fixture Impedances
F(GHz) 2.
30 zsw 12.
5 - i26.
0 z,,w 3.
7+j10.
4
CW Power
Transistor, 1W
PH2323-1
v2.
00
RF Test Fixture
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