Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP23NQ10T, PHB23NQ10T PHD23NQ10T
QUICK REFERENCE DATA
d
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
VDSS = 100 V ID = 23 A
g
RDS(ON) ≤ 70 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies • T.
V.
and computer monitor power supplies The PHP23NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB23NQ10T is supplied in the SOT404 (D2PAK) surface mounting package.
The PHD23NQ10T i...