Philips Semiconductors
Product specification
PowerMOS
transistor
PHB2N50
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance.
Intended for use in Switched Mode Power Supplies (SMPS), motor control circuits and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
500 2 50 5 UNIT V A W Ω
PINNING - SOT404
PIN 1 2 ...