Schottky Barrier Diodes (SBD)
MA2H735
Silicon epitaxial planar type
Unit : mm
For switching circuits
3.
2 ± 0.
1 0 to 0.
05
• Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition • Low VF (forward voltage) type: VF 0.
5 V at IF = 1 A
1.
9 ± 0.
1
2
1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 30 30 1 30 125 −40 to +125
Unit V V A A °C °C
0.
25 − 0.
05
0.
9 ± 0.
2 3.
8 ± 0.
2
0.
9 ± 0.
2
1 : Anode 2 : Cathode Half New Mini-Power Package
Marking Symbol: A
Note) * : The peak-to-peak...