Schottky Barrier Diodes (SBD)
MA2H736
Silicon epitaxial planar type
Unit : mm
For switching circuits
3.
2 ± 0.
1 0 to 0.
05
• Small and thin Half New Mini-power package • Allowing to rectify under (IF(AV) = 1 A) condition
1.
9 ± 0.
1
2
1
I Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 40 40 1 30 125 −40 to +125 V V A A °C °C
3.
8 ± 0.
2 0.
25 − 0.
05 1.
85 ± 0.
2
+ 0.
1
Parameter
Symbol
Rating
Unit
0.
9 ± 0.
2
0.
9 ± 0.
2
1 : Anode 2 : Cathode Half New Mini-Power Package (2-pin)
Marking Symbol: B
Note) * : The peak-t...