Schottky Barrier Diodes (SBD)
MA2YD17
Silicon epitaxial planar type
Unit: mm
For high frequency rectification ■ Features
1.
6±0.
1 1
0.
80±0.
05
0 to 0.
1
2.
6±0.
1 3.
5±0.
1
• Reverse voltage VR = 100 V is guaranteed
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 100 100 300 1.
5 125 −55 to +125 Unit V
5˚
2 0.
55±0.
1
0.
45±0.
1 0.
16+0.
1 –0.
06
mA A °C °C
1: Anode 2: Cathode
Mini2-F1 Package
Marking Symbol: 2T
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Ele...