Schottky Barrier Diodes (SBD)
MA2ZD02
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
K A 0.
625
I Features
0.
5 ± 0.
1
2
1
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 20 20 500 3 125 −55 to +125
Unit V V mA A °C °C
0.
4 ± 0.
1
1.
7 ± 0.
1 2.
5 ± 0.
2
0.
4 ± 0.
1
1 : Anode 2 : Cathode S-Mini Type Package (2-pin)
Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (nonrepetitive)
Marking Symbol: 2H Internal Connection
2
1
I Electrical Characteristics Ta = 25°C
Parameter Reverse curr...