Schottky Barrier Diodes (SBD)
MA3D755 (MA7D55)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
I Features
• Low forward voltage VF • High dielectric breakdown voltage: 5 kV • Easy-to-mount, due to its V cut lead end • TO-220D-A1 package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak reverse-voltage
VRRM
60
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward-
IFSM
90
A
surge-current *
Junction temperature Storage temperature
Tj
−40 to +125
°C
Tstg
−40 to +125
°C
Note) *: Half sine wave; 10 ms/cycle
9.
9±0.
3
Unit: mm
4.
6±0.
2 2.
9±0.
2
3.
0±0.
5
φ 3.
2±0.
1
15.
0±0.
5
13.
7±0.
2 4.
2±0.
2
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