Band Switching Diodes MA3X075D Silicon epitaxial planar type For band switching I Features • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 + 0.
25 − 0.
05 + 0.
2 Unit : mm 0.
65 ± 0.
15 0.
95 1.
9 ± 0.
2 2.
9 − 0.
05 + 0.
2 1 3 2 0.
95 1.
45 0 to 0.
1 1.
1 − 0.
1 + 0.
2 Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.
1 to 0.
3 0.
4 ± 0.
2 Storage temperature Note) * : Maximum ambient temperature during operation Mar...

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