Schottky Barrier Diodes (SBD)
MA3X786E
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification
• Two MA3X786s are contained in one package (cathode common) • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency
2.
9 − 0.
05
2.
8 0.
65 ± 0.
15
+ 0.
2 − 0.
3 + 0.
25
1.
5 − 0.
05
0.
65 ± 0.
15
0.
95
1.
9 ± 0.
2
I Features
1 3 2
+ 0.
2
0.
95
1.
45 0 to 0.
1
1.
1 −0.
1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Av...