Schottky Barrier Diodes (SBD)
MA3ZD12
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits
2.
1 ± 0.
1
I Features
• S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition • Low forward rise voltage VF (VF 0.
45 V) • Allowing high-density mounting
0.
65 2.
0 ± 0.
2 1.
3 ± 0.
1
0.
425
1.
25 ± 0.
1
0.
425
1
0.
65
3
2
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*2
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 20 25 700 2 125 −55 to +125
Unit V V mA A °C °C
0.
9 ± 0.
1
Non-repetitive peak forward surge current*1 Junction temperature Storage temperature
1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3...