PHB/PHD66NQ03LT
N-channel TrenchMOS™ logic level FET
Rev.
06 — 2 August 2004
Product data sheet
1.
Product profile
1.
1 General description
Logic level N-channel enhancement mode field effect
transistor in a plastic package using TrenchMOS™ technology.
1.
2 Features
s Logic level threshold
s Low on-state resistance.
1.
3 Applications
s DC-to-DC converters
s General purpose switching.
1.
4 Quick reference data
s VDS ≤ 25 V s RDSon ≤ 10.
5 mΩ
s ID ≤ 66 A s Qgd = 3.
6 nC (typ).
2.
Pinning information
Table 1: Discrete pinning Pin Description 1 gate (g) 2 drain (d) 3 source (s) mb mounting base;
connected to drain (d)
Simplified outline
[1] mb
mb
2 13
SOT404 (D2-PAK)
2 13
Top view
SOT428...