Switching Diodes MA6X126 Silicon epitaxial planar type Unit : mm For switching circuits 0.
65 ± 0.
15 2.
8 − 0.
3 + 0.
2 1.
5 − 0.
05 6 + 0.
25 0.
65 ± 0.
15 1.
45 ± 0.
1 0.
3 − 0.
05 + 0.
1 • Four-element contained in one package, allowing high-density mounting • High breakdown voltage (VR = 80 V) 1.
9 ± 0.
2 0.
95 0.
95 2.
9 − 0.
05 + 0.
2 5 2 4 3 1.
1 − 0.
1 Parameter Reverse voltage (DC) Peak reverse voltage Average forward current*1 Peak forward current*1 Non-repetitive peak forward surge current*1,2 Junction temperature Storage temperature Note) *1 : Value for single diode *2 : t = 1 s Symbol VR VRM IF(AV) IFM IFSM Tj Tstg Rating 80 80 100 225 500 150 −55 to +150 Unit V V mA mA mA °C °C 1...

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