Schottky Barrier Diodes (SBD)
MA3S795D, MA3S795E (MA795WA, MA795WK)
Silicon epitaxial planar type
0.
80±0.
05
For switching I Features
• High-density mounting is possible • Low forward voltage VF , optimum for low voltage rectification: VF 0.
3 V (at IF = 1 mA) • Optimum for high frequency rectification because of its short reverse recovery time (trr) • SS-Mini type 3-pin package
0.
28±0.
05
Unit: mm
0.
12+0.
05 –0.
02
(0.
44) 3° (0.
44)
3 1 2
3
1.
60±0.
05 (0.
80)
1 2 (0.
51) (0.
80) (0.
80) 1.
60+0.
05 –0.
03 3°
0.
28±0.
05 (0.
51)
0.
60+0.
05 –0.
03
0 to 0.
1
Parameter Reverse voltage (DC) Peak reverse voltage Peak forward current Series Double * Forward current (DC) Series Double * Junction temperatur...