an AMP company
Radar Pulsed Power
Transistor, 3W, 2ms Pulse, 20% Duty 1.
2 - 1.
4 GHz PH=l214=3L
Features
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NPN Silicon Microwave Power
Transistor Common Base Configuration Broadband Class C Operation Matrix Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic ~MetaUCeramic Package
Absolute Maximum Ratings at 25°C
UNLLSS
O-HZRVISE
NZTEJ.
TOLERANCES
ARE
:HILLI~ETERS
t,13MM)
Broadband Test Fixture Impedances
F(GHz) 1.
20 1.
30 1.
40 Z,,(Q) 9.
4 - j7.
8 8.
8 - j7.
3 8.
1 - j7.
2 z,,K4 8.
5 + jS.
9 9.
2 + j4.
9 5.
3 + j4.
7 j 1
YES-
FIXTURE
TEST
FIXTURE
Ci’icTT
1
50R
ZIFJ
1
Specifications Subject to Change Without No...