=_
F’E
an AMP company
Wireless Bipolar Power
Transistor, 1.
45 - 1.
60 GHz
Features
l l l l l l
1OW
PHl516-10
v2.
00
IzS
Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point Common Emitter Configuration Internal Input Impedance Matching Diffused Emitter Ballasting
Absolute Maximum Ratings at 25°C
UNLESS
UTHERVISE
NOTED,
TOLERANCES
ARE
INCHES umERS
MO5 t13Mn,
Electrical Characteristics
at 25°C
DC Forward Current Gain Power Gain Collector Eff iciency Input Return Loss Load Mismatch Tolerance 3rd Order IMD
h FE GP
%
15 10 40 10
120 3.
011 -30
dB % dB dBc
V,,=5 V, I,=1 A V,,=25 V,,=25 V,,=2...