OBSOLETE
a
FEATURES Low Offset Voltage: 50 V max Low Noise Voltage at 100 Hz, 1 mA: 1.
0 nV/√Hz max High Gain (hFE):
500 min at IC = 1 mA 300 min at IC = 1 A Excellent Log Conformance: rBE Ӎ 0.
3 ⍀ Low Offset Voltage Drift: 0.
1 V/؇C max Improved Direct Replacement for LM194/394
Low Noise, Matched Dual Monolithic
Transistor
MAT02
PIN CONNECTION
TO-78 (H Suffix)
PRODUCT DESCRIPTION The design of the MAT02 series of
NPN dual monolithic
transistors is optimized for very low noise, low drift and low rBE.
Precision Monolithics’ exclusive Silicon Nitride “TriplePassivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time.
Also, the high current...