Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP12NQ15T, PHB12NQ15T PHD12NQ15T
QUICK REFERENCE DATA
d
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
VDSS = 150 V ID = 12.
5 A
g
RDS(ON) ≤ 200 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting ...