Philips Semiconductors
Product specification
TrenchMOS™
transistor
PHP14NQ20T, PHB14NQ20T
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 14 A
g
RDS(ON) ≤ 230 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHP14NQ20T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB14NQ20T is supplied in the SOT404 (D2PAK) surfa...