Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP18NQ10T, PHB18NQ10T PHD18NQ10T
QUICK REFERENCE DATA
d
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
VDSS = 100 V ID = 18 A
g
RDS(ON) ≤ 90 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The PHP18NQ10T is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB18NQ10T is supplied in the SOT404 (D2PAK) surface mounting package.
The PHD18NQ10T is supplied in the SOT428 (DPAK) surface mou...