Philips Semiconductors
Product specification
N-channel TrenchMOS™
transistor
PHP3055E, PHD3055E
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching
SYMBOL
d
QUICK REFERENCE DATA VDSS = 55 V ID = 10.
3 A
g
RDS(ON) ≤ 150 mΩ (VGS = 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode, field-effect power
transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies The PHP3055E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHD3055E is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
PIN 1 2 3 tab gate drain1 source DESCRIPTION
SOT78 (TO220AB)
tab
SOT428 (DPAK...