Philips Semiconductors
Product specification
TrenchMOS™
transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHP45N03LT
SYMBOL
d
QUICK REFERENCE DATA VDSS = 30 V ID = 45 A
g
RDS(ON) ≤ 24 mΩ (VGS = 5 V) RDS(ON) ≤ 21 mΩ (VGS = 10 V)
s
GENERAL DESCRIPTION
N-channel enhancement mode logic level field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHP45N03LT is supplied in the SOT78...