Philips Semiconductors
Product specification
PowerMOS
transistors FREDFET, Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Fast reverse recovery diode
PHP4ND40E, PHB4ND40E
SYMBOL
d
QUICK REFERENCE DATA VDSS = 400 V ID = 4.
4 A
g
RDS(ON) ≤ 1.
8 Ω
s
trr = 180 ns
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power
transistor, incorporating a Fast Recovery Epitaxial Diode (FRED).
This gives improved switching performance in half bridge ansd full bridge converters making this device particularly suitable for inverters, lighting ballasts and motor cont...