Philips Semiconductors
Product specification
TrenchMOS™
transistor Logic level FET
FEATURES
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
PHP80N06LT, PHB80N06LT
SYMBOL
d
QUICK REFERENCE DATA VDSS = 55 V ID = 75 A
g s
RDS(ON) ≤ 14 mΩ (VGS = 5 V) RDS(ON) ≤ 13 mΩ (VGS = 10 V)
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power
transistor in a plastic envelope using ’trench’ technology.
The device has very low on-state resistance.
It is intended for use in dc to dc converters and general purpose switching applications.
The PHP80N06LT is supplie...