Philips Semiconductors
Objective specification
PowerMOS
transistor
PHT1N60R
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power
transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance.
Intended for use in Compact Fluorescent Lights (CFL) and general purpose switching applications.
QUICK REFERENCE DATA
SYMBOL VDS ID Ptot RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance MAX.
600 0.
53 1.
8 16.
0 UNIT V A W Ω
PINNING - SOT223
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
PIN CON...