MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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™ Data Sheet Insulated Gate Bipolar
Transistor with Anti-Parallel Diode
Designer's
MGY20N120D
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar
Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability.
Short circuit rated IGBT’s are specifically suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives.
Fast switching characteristics result in efficient operation at high frequencies.
Co–packaged IGBT...