DISCRETE SEMICONDUCTORS
DATA SHEET
MF1011B900Y Microwave power
transistor
Product specification Supersedes data of December 1994 1997 Feb 18
Philips Semiconductors
Product specification
Microwave power
transistor
FEATURES • Suitable for short and medium pulse applications up to 100 µs pulse width, duty factor 10% • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure provides high emitter efficiency • Gold metallization with barrier realizes very stable characteristics and excellent lifetime • Multicell geometry improves power sharing and reduces thermal resistance • Internal input and output prematching networks allow an easier design of circui...