TOSHIBA IGBT Module Silicon N Channel IGBT MG100J1BS11 MG100J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Rating 600 ±20 100 200 300 150 −40 to 125 2500 (AC 1 Minute) 2/3 Unit V V A W °C °C V Nm ― ― 2-33F2A 1 2003-04-11 Electrical Characteristics (Ta...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)