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Part Number
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MG100J1ZS40 |
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Manufacturer
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Toshiba |
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Description
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N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
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Published
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Apr 29, 2005 |
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Detailed Description
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TOSHIBA GTR Module Silicon N Channel IGBT
MG100J1ZS40
High Power Switching Applications Motor Control Applications
MG10...
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Datasheet
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MG100J1ZS40
|
Overview
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J1ZS40
High Power Switching Applications Motor Control Applications
MG100J1ZS40
Unit: mm
l High input impedance
l High spee
: tf = 0.
35µs (max) trr = 0.
15µs (max)
l Low saturation voltage : VCE (sat) = 3.
5V (max)
l Enhancement-mode
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
JEDEC JEITA TOSHIBA
Weight: 202g
Symbol
VC...
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