TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG100J2YS50 Unit: mm l The electrodes are isolated from case.
l High input impedance.
l Includes a complete half bridge in one package.
l Enhancement-mode.
l High speed : tf = 0.
30µs (Max) (IC = 100A) trr = 0.
15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat)=2.
70V (Max) (IC=100A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc=25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Termi...

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