Part Number
|
MG100J7KS50 |
Manufacturer
|
Toshiba |
Description
|
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
Published
|
Apr 29, 2005 |
Detailed Description
|
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J7KS50
High Power Switching Applications Motor Control Applications
MG10...
|
Datasheet
|
MG100J7KS50
|
Overview
TOSHIBA GTR Module Silicon N Channel IGBT
MG100J7KS50
High Power Switching Applications Motor Control Applications
MG100J7KS50
Unit: mm
l The electrodes are isolated from case.
l High input impedance
l 7 IGBTs built into 1 package.
l Enhancement-mode
l High speed type IGBT : VCE (sat) = 2.
5 V (max) (@IC = 100 A) : tf = 0.
5 µs (max) (@IC = 100 A) : trr = 0.
3 µs (max) (@IF = 100 A)
Equivalent Circuit
JEDEC JEITA TOSHIBA Weight: 520g (typ.
)
― ― 2-110A1B
1 2001-08-16
Inverter Stage Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
...
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