Part Number
|
MG100Q1JS40 |
Manufacturer
|
Toshiba |
Description
|
N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
Published
|
Apr 29, 2005 |
Detailed Description
|
TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q1JS40
MG100Q1JS40
High Power Switching Applications Chopper Applicatio...
|
Datasheet
|
MG100Q1JS40
|
Overview
TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q1JS40
MG100Q1JS40
High Power Switching Applications Chopper Applications
Unit: mm
l High input impedance l High speed : tf = 0.
5µs (max)
trr = 0.
5µs (max) l Low saturation voltage
: VCE (sat) = 4.
0V (max) l Enhancement-mode l The electrodes are isolated from case.
Equivalent Circuit
JEDEC JEITA TOSHIBA
― ― 2-108A4A
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES VGES
VR...
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