Part Number
|
MG1200FXF1US51 |
Manufacturer
|
Toshiba |
Description
|
TOSHIBA GTR Module Silicon N-Channel IGBT |
Published
|
Apr 29, 2005 |
Detailed Description
|
MG1200FXF1US51
Preliminary
TOSHIBA GTR Module Silicon N-Channel IGBT
MG1200FXF1US51
High Power Switching Applications...
|
Datasheet
|
MG1200FXF1US51
|
Overview
MG1200FXF1US51
Preliminary
TOSHIBA GTR Module Silicon N-Channel IGBT
MG1200FXF1US51
High Power Switching Applications Motor Control Applications
· · · High input impedance Enhancement mode Electrodes are isolated from case.
Equivalent Circuit
C G E E E E C C C
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Collector current 1 ms Peak 1 cycle surge current 10 ms (half sine) Symbol VCES VGES IC ICP IFSM Tj Tstg VIsol ¾ Rating 3300 ±20 1200 2400 10 -40~125 -40~125 6000 (AC 1 min) 2/7 Nm 4 Unit V V A A kA °C °C V
Operating junction temperature Storage temperature range Isolation voltage Terminal: M4/M8 Screw torque Mounting
Caution: MG1200FXF...
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