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MG150J2YS50

Part Number MG150J2YS50
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 MG150J2YS50 High Power Switching Applications Motor Control Appl...
Datasheet MG150J2YS50




Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG150J2YS50 MG150J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case l High input impedance l Includes a complete half bridge in one package l Enhancement-mode l High speed : tf = 0.
30µs (Max) (IC = 150A) trr = 0.
15µs (Max) (IF = 150A) l Low saturation voltage : VCE (sat) = 2.
70V (Max) (IC = 150A) Equivalent Circuit JEDEC EIAJ TOSHIBA ― ― 2-95A1A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature r...






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