TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case.
l High input impedance l Includes a complete half bridge in one package.
l Enhancement-mode l High Speed : tf = 0.
30µs (Max) (IC = 200A) trr = 0.
15µs (Max) (IF = 200A) l Low saturation voltage : VCE (sat) = 2.
70V (Max) (IC = 200A) Equivalent Circuit JEDEC EIAJ TOSHIBA ― ― 2-95A1A Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)