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MG240V1US41

Part Number MG240V1US41
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 MG240V1US41 High Power Switching Applications Motor Control Appl...
Datasheet MG240V1US41




Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case l High input impedance l Enhancement-mode l High speed : tf = 1.
5µs (Max.
)(IC = 240A) trr = 0.
6µs (Max.
)(IF = 240A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (M4/M6 / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC EIAJ TOSHIBA Weight: 465g(Typ.
) Rating...






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