Part Number
|
MG240V1US41 |
Manufacturer
|
Toshiba |
Description
|
Silicon N Channel IGBT GTR Module |
Published
|
Apr 29, 2005 |
Detailed Description
|
TOSHIBA GTR Module Silicon N Channel IGBT
MG240V1US41
MG240V1US41
High Power Switching Applications Motor Control Appl...
|
Datasheet
|
MG240V1US41
|
Overview
TOSHIBA GTR Module Silicon N Channel IGBT
MG240V1US41
MG240V1US41
High Power Switching Applications Motor Control Applications
Unit: mm
l The electrodes are isolated from case l High input impedance l Enhancement-mode l High speed : tf = 1.
5µs (Max.
)(IC = 240A)
trr = 0.
6µs (Max.
)(IF = 240A)
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC 1ms
Forward current
DC 1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (M4/M6 / mounting)
Symbol
VCES VGES
IC ICP IF IFM PC Tj Tstg VIsol
―
JEDEC EIAJ TOSHIBA Weight: 465g(Typ.
)
Rating...
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