Part Number
|
MG800J2YS50A |
Manufacturer
|
Toshiba |
Description
|
TOSHIBA IGBT Module Silicon N Channel IGBT |
Published
|
Apr 29, 2005 |
Detailed Description
|
MG800J2YS50A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG800J2YS50A
High power switching applications Motor control ap...
|
Datasheet
|
MG800J2YS50A
|
Overview
MG800J2YS50A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG800J2YS50A
High power switching applications Motor control applications
· · · The electrodes are isolated from case.
Enhancement-mode Thermal output terminal (TH) Unit: mm
Equivalent Circuit
TH1 TH2 C1
G1 Fo1 E1 E1/C2
JEDEC
G2 Fo2 E2 E2
― ― 2-126A1A
JEITA TOSHIBA Weight: 680 g (typ.
)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol ¾ ¾ Rating 600 ±20 800 800 2900 150...
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