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MG800J2YS50A

Part Number MG800J2YS50A
Manufacturer Toshiba
Description TOSHIBA IGBT Module Silicon N Channel IGBT
Published Apr 29, 2005
Detailed Description MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control ap...
Datasheet MG800J2YS50A




Overview
MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications · · · The electrodes are isolated from case.
Enhancement-mode Thermal output terminal (TH) Unit: mm Equivalent Circuit TH1 TH2 C1 G1 Fo1 E1 E1/C2 JEDEC G2 Fo2 E2 E2 ― ― 2-126A1A JEITA TOSHIBA Weight: 680 g (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque Terminal: M8 Mounting: M5 DC DC Symbol VCES VGES IC IF PC Tj Tstg VIsol ¾ ¾ Rating 600 ±20 800 800 2900 150...






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