MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V3436 3.
4 - 3.
6GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.
4 - 3.
6 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
21.
0 +/-0.
3 2 N I.
0 M 2 / + 9 .
2 1 N I M 2 OUTLINE DRAWING Unit : millimeters FEATURES Class A operation Internally matched to 50(ohm) system High output power P1dB = 4W (TYP.
) @ f=3.
4 - 3.
6 GHz High power gain GLP = 12 dB (TYP.
) @ f=3.
4 - 3.
6GHz High power added efficiency P.
A.
E.
= 32 % (TYP.
) @ f=3.
4 - 3.
6GHz Low distortion [item -51] IM3=-45dBc(Typ.
) @Po=25dBm S.
C.
L.
(1) 0.
6 ...

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