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MGFC39V3436

Part Number MGFC39V3436
Manufacturer Mitsubishi
Description C band internally matched power GaAs FET
Published Apr 29, 2005
Detailed Description C band internally matched power GaAs FET MGFC39V3436 3.4 – 3.6 GHz BAND / 8W 11.3 DESCRIPTION The MGFC39V3436 is a...
Datasheet MGFC39V3436




Overview
C band internally matched power GaAs FET MGFC39V3436 3.
4 – 3.
6 GHz BAND / 8W 11.
3 DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.
4 – 3.
6 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.
) @f=3.
4 – 3.
6GHz  High power gain GLP=12.
5dB (TYP.
) @f=3.
4 – 3.
6GHz  High power added efficiency P.
A.
E.
=32% (TYP.
) @f=3.
4 – 3.
6GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=28dBm S.
C.
L APPLICATION  item 01 : 3.
4 – 3.
6 GHz band power amplifier  item 51 : 3.
4 – 3.
6 GHz band digital radio ...






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