C band internally matched power GaAs FET MGFC39V5258 5.
2 – 5.
8 GHz BAND / 8W DESCRIPTION The MGFC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.
2 – 5.
8 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=8W (TYP.
) @f=5.
2 – 5.
8GHz  High power gain GLP=9.
0dB (TYP.
) @f=5.
2 – 5.
8GHz  High power added efficiency P.
A.
E.
=30% (TYP.
) @f=5.
2 – 5.
8GHz APPLICATION  5.
2 – 5.
8 GHz band power amplifier QUALITY  IG 2MIN 12.
9 +/-0.
2 2MIN OUTLINE DRAW ING Unit : millimeters 21.
0 +/-0.
3 (1) 0.
6 +/-0.
15 (2) (2) R-1.
6 (3) 10.
7...

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