C band internally matched power GaAs FET MGFC41V5964 5.
9 – 6.
4 GHz BAND / 12W DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.
9 – 6.
4 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=12W (TYP.
) @f=5.
9 – 6.
4GHz  High power gain GLP=9.
5dB (TYP.
) @f=5.
9 – 6.
4GHz  High power added efficiency P.
A.
E.
=33% (TYP.
) @f=5.
9 – 6.
4GHz  Low distortion [ item -51] IM3=-45dBc (TYP.
) @Po=30dBm S.
C.
L.
APPLICATION  item 01 : 5.
9 – 6.
4 GHz band power amplifier QUALITY  IG OUTLINE DRAWING Unit: millimeters ...

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