C band internally matched power GaAs FET MGFC45V3642A 3.
6 – 4.
2 GHz BAND / 32W DESCRIPTION The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.
6 – 4.
2 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.
) @f=3.
6 – 4.
2GHz  High power gain GLP=11.
0dB (TYP.
) @f=3.
6 – 4.
2GHz  High power added efficiency P.
A.
E.
=36% (TYP.
) @f=3.
6 – 4.
2GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=34.
5dBm S.
C.
L 2MIN 17.
4 +/- 0.
2 8.
0 +/- 0.
2 2MIN OUTLINE R1.
2 24 +/- 0.
3 unit : mm 0.
6 +/- 0.
15 (1 ) (2 ) (3 ...

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