C band internally matched power GaAs FET MGFC45V5964A 5.
9 – 6.
4 GHz BAND / 32W DESCRIPTION The MGFC45V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.
9 – 6.
4 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Internally matched to 50(ohm) system  High output power P1dB=32W (TYP.
) @f=5.
9 – 6.
4GHz  High power gain GLP=9.
0dB (TYP.
) @f=5.
9 – 6.
4GHz  High power added efficiency P.
A.
E.
=33% (TYP.
) @f=5.
9 – 6.
4GHz  Low distortion [item -51] IM3=-45dBc (TYP.
) @Po=34.
5dBm S.
C.
L APPLICATION  5.
9 – 6.
4 GHz band power amplifier QUALITY  IG 2MIN 17.
4 +/- 0.
2 8.
0 +/- 0.
2 2MIN OUTLINE R1.
2 24 +/- 0...

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