C band internally matched power GaAs FET MGFC47V5864 5.
8 – 6.
4 GHz BAND / 50W DESCRIPTION The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.
8 – 6.
4 GHz band amplifiers.
The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES Class AB operation Internally matched to 50(ohm) system  High output power P1dB=50W (TYP.
) @f=5.
8 – 6.
4GHz  High power gain GLP=9.
5dB (TYP.
) @f=5.
8 – 6.
4GHz  High power added efficiency PAE=35% (TYP.
) @f=5.
8 – 6.
4GHz APPLICATION  Solid-state power amplifier for satellite earth-station communication transmitter and VSAT 2MIN .
17 .
4 +/-0.
2 8.
0+/-0.
2 2.
4 2 MIN.
OUTLINE DRAWING Unit : ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)